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MX2N5116UB

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MX2N5116UB

JFET P-CH 30V UB

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MX2N5116UB is a P-Channel JFET designed for demanding applications. This surface mount component offers a Drain to Source Voltage (Vdss) of 30V and a low on-resistance of 175 Ohms. The JFET exhibits a maximum power dissipation of 500 mW and a breakdown voltage (V(BR)GSS) of 30V. With an input capacitance (Ciss) of 27pF (max) at 15V, it is suitable for various signal amplification and switching tasks. The current drain (Idss) is 5 mA at 15V, and the cutoff voltage (VGS off) is 1V at 1 nA. Qualifying to MIL-PRF-19500, this device is rated for military applications and operates across a wide temperature range of -65°C to 200°C. The UB package is provided in bulk.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds27pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageUB
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Resistance - RDS(On)175 Ohms
Voltage - Cutoff (VGS off) @ Id1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 15 V
QualificationMIL-PRF-19500

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