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MX2N5116

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MX2N5116

JFET P-CH 30V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MX2N5116 is a P-Channel JFET with a Drain to Source Voltage (Vdss) of 30V and a maximum power dissipation of 500mW. This through-hole component, housed in a TO-18-3 metal can package (TO-206AA), features a typical Drain Current (Idss) of 25mA at 15V and a cutoff voltage (VGS off) of 4V. With an input capacitance (Ciss) of 27pF (max) at 15V, it offers an RDS(On) of 175 Ohms. The MX2N5116 is qualified to MIL-PRF-19500 and operates within a temperature range of -65°C to 200°C. This device is commonly utilized in aerospace, defense, and high-reliability industrial applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds27pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageTO-18
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Resistance - RDS(On)175 Ohms
Voltage - Cutoff (VGS off) @ Id4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)25 mA @ 15 V
QualificationMIL-PRF-19500

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