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MX2N5115

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MX2N5115

JFET P-CH 30V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MX2N5115 is a P-Channel JFET with a Drain-to-Source Voltage (Vdss) of 30V. This component offers a continuous Drain Current (Idss) of 15 mA at 15V, with a typical gate-source cutoff voltage (VGS off) of 6V at 1 nA. The device features a maximum power dissipation of 500 mW and a breakdown voltage of 30V. Designed for through-hole mounting in a TO-18 (TO-206AA) metal can package, it operates within an extended temperature range of -65°C to 200°C. Its low input capacitance (Ciss) is 25pF at 15V. The MX2N5115 is qualified to MIL-PRF-19500 standards, indicating its suitability for demanding applications, including those in aerospace and defense.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Resistance - RDS(On)100 Ohms
Voltage - Cutoff (VGS off) @ Id6 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)15 mA @ 15 V
QualificationMIL-PRF-19500

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