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MX2N5114UB/TR

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MX2N5114UB/TR

JFET P-CH 30V UB

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MX2N5114UB-TR is a P-Channel JFET designed for demanding applications. This surface mount component offers a Drain to Source Voltage (Vdss) of 30V and a maximum power dissipation of 500mW. Featuring a low cutoff voltage of 5V at 1nA and a Vds of 18V with a corresponding Idss of 30mA, it is suitable for signal amplification and switching. The device boasts an input capacitance (Ciss) of 25pF at 15V and a typical on-resistance (RDS(On)) of 75 Ohms. Qualified to MIL-PRF-19500 and rated for an operating temperature range of -65°C to 200°C, this JFET is ideal for use in aerospace, defense, and high-reliability industrial systems. The UB package is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageUB
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Resistance - RDS(On)75 Ohms
Voltage - Cutoff (VGS off) @ Id5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)30 mA @ 18 V
QualificationMIL-PRF-19500

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