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MX2N5114

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MX2N5114

JFET P-CH 30V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MX2N5114 is a P-channel JFET with a Drain to Source voltage (Vdss) of 30V. This military-grade component, qualified to MIL-PRF-19500, features a maximum power dissipation of 500 mW and an On-Resistance (RDS(On)) of 75 Ohms. The device exhibits a Drain Current (Idss) of 90 mA at 18V (Vgs=0) and a typical input capacitance (Ciss) of 25pF at 15V. The cutoff voltage (VGS off) is 10V at 1 nA, and the Gate to Source Breakdown voltage (V(BR)GSS) is 30V. Supplied in a TO-18 (TO-206AA) metal can package, it is suitable for through-hole mounting and operates across a wide temperature range of -65°C to 200°C. This JFET finds application in various military and aerospace systems, as well as high-frequency switching and amplification circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Resistance - RDS(On)75 Ohms
Voltage - Cutoff (VGS off) @ Id10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)90 mA @ 18 V
QualificationMIL-PRF-19500

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