Home

Products

Discrete Semiconductor Products

Transistors

JFETs

MX2N4860

Banner
productimage

MX2N4860

JFET N-CH 30V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

The Microchip Technology MX2N4860 is an N-channel JFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 30 V and a maximum power dissipation of 360 mW. The device exhibits a low gate-source cutoff voltage (VGS off) of 6 V at 500 pA, and a drain current (Idss) of 100 mA at 15 V. With a breakdown voltage (V(BR)GSS) of 30 V, it offers robust performance. The MX2N4860 is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. Its operational temperature range spans from -65°C to 200°C. This JFET is qualified under MIL-PRF-19500/385, indicating its suitability for military and high-reliability applications. It finds use in areas such as RF amplification, switching, and general-purpose analog signal processing.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds18pF @ 10V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max360 mW
Resistance - RDS(On)40 Ohms
Voltage - Cutoff (VGS off) @ Id6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0)100 mA @ 15 V
QualificationMIL-PRF-19500/385

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MQ2N5114UB

JFET P-CH 30V UB

product image
2N4861UB

JFET N-CH 30V UB

product image
MQ2N2609

JFET P-CH 30V TO18