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MX2N4856

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MX2N4856

JFET N-CH 40V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MX2N4856 is an N-channel JFET with a drain-to-source voltage (Vdss) of 40V and a maximum power dissipation of 360mW. This component features a breakdown voltage (V(BR)GSS) of 40V and a cutoff voltage (VGS off) of 4V at 0.5nA. The current drain (Idss) is specified at 175mA at 15V with Vgs=0, and the on-resistance (RDS(On)) is 25 Ohms. Input capacitance (Ciss) is a maximum of 18pF at 10V. The device is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. This military-grade JFET, qualified under MIL-PRF-19500/385, operates across a temperature range of -65°C to 200°C and is commonly utilized in high-reliability aerospace, defense, and industrial applications requiring stable performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds18pF @ 10V
Voltage - Breakdown (V(BR)GSS)40 V
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Drain to Source Voltage (Vdss)40 V
Power - Max360 mW
Resistance - RDS(On)25 Ohms
Voltage - Cutoff (VGS off) @ Id4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0)175 mA @ 15 V
QualificationMIL-PRF-19500/385

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