MV2N5116UB
JFET P-CH 30V UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology's MV2N5116UB is a P-Channel JFET designed for demanding applications. This surface mount device offers a drain-to-source voltage (Vdss) of 30V and a maximum power dissipation of 500mW. Key electrical characteristics include a drain current (Idss) of 5mA at 15V (Vgs=0) and a typical on-resistance (RDS(On)) of 175 Ohms. The input capacitance (Ciss) is specified at a maximum of 27pF at 15V. Operating across an extended temperature range of -65°C to 200°C, this component meets MIL-PRF-19500 qualification, indicating its suitability for military and high-reliability environments. The UB package, a 3-SMD, No Lead configuration, is supplied in bulk. This JFET is commonly utilized in high-frequency amplification and switching circuits within defense and aerospace industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 175 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Qualification | MIL-PRF-19500 |
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