MV2N5115UB
JFET P-CH 30V UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology's MV2N5115UB is a P-channel JFET designed for demanding applications. This surface mount device offers a 30V drain-to-source voltage (Vdss) and a maximum power dissipation of 500mW. Key parameters include a low drain current (Idss) of 15mA @ 15V and an input capacitance (Ciss) of 25pF @ 15V. The device features a breakdown voltage (V(BR)GSS) of 30V and a cutoff voltage (VGS off) of 3V @ 1nA. Qualified to MIL-PRF-19500 military standards and operating across a wide temperature range of -65°C to 200°C (TJ), the MV2N5115UB is suitable for use in aerospace and defense systems. It is supplied in a 3-SMD, No Lead UB package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 100 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 15 mA @ 15 V |
| Qualification | MIL-PRF-19500 |
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