MV2N5114
JFET P-CH 30V TO18Manufacturer: Microchip Technology
Categories: JFETs
Quality Control: Learn More
Microchip Technology MV2N5114 is a P-channel JFET designed for high-reliability applications. This military-grade component features a Drain to Source Voltage (Vdss) of 30 V and a maximum power dissipation of 500 mW. The MV2N5114 exhibits a typical Idss of 90 mA at 18 V (Vgs=0) and a cutoff voltage (Vgs off) of 10 V at 1 nA. Input capacitance (Ciss) is specified at a maximum of 25 pF @ 15 V. With a breakdown voltage (V(BR)GSS) of 30 V and a low on-resistance of 75 Ohms, this JFET is suitable for demanding applications. The component is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. It operates reliably across an extended temperature range of -65°C to 200°C. This device meets MIL-PRF-19500 qualification standards, indicating its suitability for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 75 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 90 mA @ 18 V |
| Qualification | MIL-PRF-19500 |