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MV2N4860

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MV2N4860

JFET N-CH 30V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MV2N4860 is an N-Channel Junction Field-Effect Transistor (JFET) qualified to MIL-PRF-19500/385. This device features a drain-to-source voltage (Vdss) of 30V and a maximum power dissipation of 360mW. The MV2N4860 offers a typical gate-source cutoff voltage (VGS(off)) of 6V at 500pA and a drain current (Idss) of 100mA at 15V. With a low on-resistance of 40 Ohms and an input capacitance (Ciss) of 18pF (max) at 10V, this JFET is suitable for applications requiring high input impedance and fast switching. The device is housed in a TO-18-3 metal can package (TO-206AA) for through-hole mounting and operates across a wide temperature range of -65°C to 200°C. This component finds use in military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds18pF @ 10V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageTO-18
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max360 mW
Resistance - RDS(On)40 Ohms
Voltage - Cutoff (VGS off) @ Id6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0)100 mA @ 15 V
QualificationMIL-PRF-19500/385

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