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MV2N4093UB/TR

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MV2N4093UB/TR

JFET N-CH 40V 3UB

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MV2N4093UB-TR is an N-Channel JFET designed for demanding applications. This surface mount component offers a 40V drain-to-source breakdown voltage (Vdss) and a 40V gate-to-source breakdown voltage (V(BR)GSS). With a maximum power dissipation of 360 mW and an on-resistance (RDS(On)) of 80 Ohms, it provides efficient switching and amplification characteristics. The device exhibits a typical IDSS of 8 mA at 20V and an input capacitance (Ciss) of 16pF at 20V. Manufactured to MIL-PRF-19500/431 qualification standards, this JFET operates across an extended temperature range of -65°C to 175°C. Its UB package, supplied on tape and reel, makes it suitable for high-volume military and aerospace manufacturing.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds16pF @ 20V
Voltage - Breakdown (V(BR)GSS)40 V
Supplier Device PackageUB
GradeMilitary
Drain to Source Voltage (Vdss)40 V
Power - Max360 mW
Resistance - RDS(On)80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0)8 mA @ 20 V
QualificationMIL-PRF-19500/431

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