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MQ2N5116UB

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MQ2N5116UB

JFET P-CH 30V UB

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MQ2N5116UB is a P-Channel JFET designed for high-reliability applications, featuring a 30V drain-to-source breakdown voltage and a maximum power dissipation of 500mW. This military-grade component, qualified to MIL-PRF-19500, offers a low ON-resistance of 175 Ohms and a continuous drain current (Idss) of 5mA at 15V. With a typical input capacitance (Ciss) of 27pF at 15V, it is suitable for demanding operating temperatures ranging from -65°C to 200°C. The MQ2N5116UB is presented in a compact UB package for surface mounting, making it ideal for use in aerospace, defense, and other critical electronic systems requiring robust performance and excellent thermal stability.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds27pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageUB
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Resistance - RDS(On)175 Ohms
Voltage - Cutoff (VGS off) @ Id1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 15 V
QualificationMIL-PRF-19500

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