MQ2N5116
JFET P-CH 30V TO18Manufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology MQ2N5116 is a P-Channel JFET designed for demanding applications. This through-hole component, housed in a TO-18 metal can package (TO-206AA), features a Drain to Source Voltage (Vdss) of 30V and a breakdown gate-source voltage, V(BR)GSS, of 30V. The device offers a maximum power dissipation of 500 mW and a typical Drain Current (Idss) of 5 mA at 15V Vds and 0V Vgs. With a cutoff voltage (VGS off) of 1V at 1mA, and a low on-resistance (RDS(On)) of 175 Ohms, it is suitable for amplification and switching circuits. This JFET operates across a wide temperature range of -65°C to 200°C (TJ) and meets MIL-PRF-19500 qualification, making it ideal for aerospace, defense, and other high-reliability environments.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-18 |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 175 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 mA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Qualification | MIL-PRF-19500 |
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