MQ2N5115
JFET P-CH 30V TO18Manufacturer: Microchip Technology
Categories: JFETs
Quality Control: Learn More
Microchip Technology MQ2N5115 is a P-channel JFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 30V and a maximum power dissipation of 500mW. The device exhibits a typical Drain current (Idss) of 15mA at 15V (Vgs=0) and a gate-source breakdown voltage (V(BR)GSS) of 30V. With an input capacitance (Ciss) of 25pF (max) at 15V (Vds), it offers predictable performance. The MQ2N5115 is supplied in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. Its operating temperature range extends from -65°C to 200°C. This JFET is qualified to MIL-PRF-19500, indicating its suitability for military and high-reliability applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 100 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 15 mA @ 15 V |
| Qualification | MIL-PRF-19500 |
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