MQ2N5114UB
JFET P-CH 30V UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology's MQ2N5114UB is a P-Channel JFET designed for demanding applications. This military-grade component features a drain-to-source voltage (Vdss) of 30V and a breakdown voltage (V(BR)GSS) of 30V. With a maximum power dissipation of 500 mW and an on-resistance (RDS(On)) of 75 Ohms, it delivers reliable performance. The device offers an IDSS of 30 mA @ 18V and a cutoff voltage (VGS off) of 5V @ 1nA. Its low input capacitance (Ciss) of 25pF @ 15V is suitable for high-frequency operations. The MQ2N5114UB is housed in a 3-SMD, No Lead UB package for surface mounting and operates across an extended temperature range of -65°C to 200°C. This component is qualified to MIL-PRF-19500 standards and is commonly utilized in aerospace, defense, and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 75 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 5 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 30 mA @ 18 V |
| Qualification | MIL-PRF-19500 |
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