MQ2N5114
JFET P-CH 30V TO18Manufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology MQ2N5114 is a P-Channel JFET designed for demanding applications. This component features a Vdss of 30V and a power dissipation of 500mW, housed in a TO-18 (TO-206AA) metal can package for through-hole mounting. The MQ2N5114 exhibits a typical Idss of 30mA at 18V, with a Vgs(off) of 10V at 1nA. Its input capacitance (Ciss) is rated at a maximum of 25pF at 15V, and it has a minimum breakdown voltage (V(BR)GSS) of 30V. The device operates across a wide temperature range of -65°C to 200°C. This JFET is qualified to MIL-PRF-19500 and is suitable for use in aerospace, defense, and high-reliability industrial systems. Its low on-resistance of 75 Ohms further enhances its utility in various signal amplification and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 75 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 30 mA @ 18 V |
| Qualification | MIL-PRF-19500 |
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