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MQ2N4859UB

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MQ2N4859UB

JFET N-CH 30V UB

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology MQ2N4859UB is an N-Channel JFET designed for demanding applications. This surface-mount device features a Vds (Drain to Source Voltage) of 30V and a maximum power dissipation of 360mW. The MQ2N4859UB exhibits a typical Idss (Drain to Source Current at Vgs=0) of 50mA at 15V and a Vgs(off) (Gate to Source Cutoff Voltage) of 4V at 500pA. With a low On-Resistance (RDS(On)) of 25 Ohms and an input capacitance (Ciss) of 18pF (max) at 10V, it is suitable for switching and amplification circuits in aerospace and defense systems. The component is qualified to MIL-PRF-19500/385, ensuring reliability in harsh environments. It operates within a temperature range of -65°C to 200°C (TJ) and is supplied in UB packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds18pF @ 10V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageUB
GradeMilitary
Drain to Source Voltage (Vdss)30 V
Power - Max360 mW
Resistance - RDS(On)25 Ohms
Voltage - Cutoff (VGS off) @ Id4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0)50 mA @ 15 V
QualificationMIL-PRF-19500/385

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