MQ2N4858UB
JFET N-CH 40V UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology's MQ2N4858UB is an N-Channel JFET designed for demanding applications. This component offers a drain-to-source voltage (Vdss) of 40V and a maximum power dissipation of 360mW, making it suitable for use in high-frequency switching and amplification circuits. Key parameters include a gate-source cutoff voltage (VGS off) of 800mV at 500pA and a drain current (Idss) of 8mA at 15V. With a low input capacitance (Ciss) of 18pF at 10V and a drain-source on-resistance (RDS(On)) of 60 Ohms, the MQ2N4858UB facilitates efficient signal transfer. The device is housed in a 3-SMD, No Lead UB package, suitable for surface mounting. Operating across a wide temperature range of -65°C to 200°C (TJ), this JFET finds utility in industrial control systems and RF communication equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | UB |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 60 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 500 pA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA @ 15 V |
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