MQ2N4857UB
JFET N-CH 40V TO18Manufacturer: Microchip Technology
Categories: JFETs
Quality Control: Learn More
Microchip Technology MQ2N4857UB is an N-Channel JFET with a 40V drain-source breakdown voltage (Vdss) and a 40V gate-source breakdown voltage (V(BR)GSS). This device features a maximum power dissipation of 360mW and a typical RDS(On) of 40 Ohms. The MQ2N4857UB exhibits a drain current (Idss) of 20mA at 15V with Vgs=0, and a gate-source cutoff voltage (VGS off) of 2V at 500pA. Input capacitance (Ciss) is a maximum of 18pF at 10V. This component is housed in a TO-18 (TO-206AA) metal can package with through-hole mounting. It operates within an extended temperature range of -65°C to 200°C (TJ). The MQ2N4857UB is commonly utilized in applications within the industrial and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-18 (TO-206AA) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 40 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 2 V @ 500 pA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
Request a Quote
Clients Also Buy
MQ2N4393UB/TR
JFET
MV2N4860UB
JFET N-CH
MV2N4857UB/TR
JFET