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MQ2N2609

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MQ2N2609

JFET P-CH 30V TO18

Manufacturer: Microchip Technology

Categories: JFETs

Quality Control: Learn More

Microchip Technology's MQ2N2609 is a P-channel JFET with a Drain to Source Voltage (Vdss) of 30V and a breakdown voltage of 30V. This through-hole component, packaged in a TO-18 (TO-206AA) metal can, offers a maximum power dissipation of 300mW and operates across a wide temperature range of -65°C to 200°C. The MQ2N2609 exhibits a typical Idss of 2 mA at 5V and a cutoff voltage (VGS off) of 750 mV at 1 µA. Its low input capacitance of 10pF at 5V makes it suitable for applications in general-purpose amplification and switching circuits, often found in industrial control systems and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds10pF @ 5V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageTO-18 (TO-206AA)
Drain to Source Voltage (Vdss)30 V
Power - Max300 mW
Voltage - Cutoff (VGS off) @ Id750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0)2 mA @ 5 V

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