2N5116UB
JFET P-CH 30V UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology P-Channel JFET, Part Number 2N5116UB. This surface mount device features a 30V drain-to-source breakdown voltage (Vdss) and a 30V gate-to-source breakdown voltage (V(BR)GSS). It is rated for a maximum power dissipation of 500 mW and an on-resistance (RDS(On)) of 175 Ohms. The device exhibits a quiescent drain current (Idss) of 25 mA at 15V and a gate cutoff voltage (VGS off) of 4V at 1 nA. Input capacitance (Ciss) is specified at a maximum of 27pF at 15V. Designed for demanding applications, it operates across a wide temperature range of -65°C to 200°C. This component is qualified to MIL-PRF-19500 standards and is suitable for use in aerospace, defense, and high-reliability industrial systems. The package is a 3-SMD, No Lead (UB) configuration, supplied in bulk.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 175 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25 mA @ 15 V |
| Qualification | MIL-PRF-19500 |
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