2N5116UA
JFET P-CH 30V UAManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology's 2N5116UA is a P-channel JFET designed for demanding applications. This surface-mount component offers a Drain to Source Voltage (Vdss) of 30V and a maximum power dissipation of 500 mW. It features a typical Drain Current (Idss) of 5 mA at 15V (Vgs=0) and a Gate-Source Cutoff Voltage (Vgs off) of 1V at 1 nA. The input capacitance (Ciss) is a maximum of 27pF at 15V. With a breakdown voltage (V(BR)GSS) of 30V and an RDS(On) of 175 Ohms, this device is suitable for use in industrial and aerospace sectors. The 2N5116UA is supplied in a UA package suitable for bulk handling and operates within a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UA |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 175 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
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