2N5114UB
JFET P-CH 30V UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology P-Channel JFET, part number 2N5114UB, offers robust performance for demanding applications. This device features a 30V drain-to-source breakdown voltage (Vdss) and a maximum power dissipation of 500mW. Specified with a 75 Ohm on-resistance (RDS(On)), it provides efficient switching and amplification characteristics. The 2N5114UB exhibits a maximum continuous drain current (Idss) of 90mA at 18V with zero gate-source voltage. Input capacitance (Ciss) is a maximum of 25pF at 15V. Designed for surface mount applications, the UB package (3-SMD, No Lead) ensures compact integration. Operating across a wide temperature range of -65°C to 200°C (TJ), this component is qualified to MIL-PRF-19500 standards, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Grade | Military |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 75 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 90 mA @ 18 V |
| Qualification | MIL-PRF-19500 |
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