Microchip Technology's 2N4859UB is an N-Channel JFET designed for robust performance in demanding applications. This surface-mount component features a 30V drain-to-source voltage (Vdss) and a maximum power dissipation of 360mW. It offers a typical Idss of 175mA at 15V and a cutoff voltage (Vgs off) of 10V at 500pA. The input capacitance (Ciss) is specified at a maximum of 18pF at 10V. With a breakdown voltage (V(BR)GSS) of 30V and an operating temperature range from -65°C to 200°C, the 2N4859UB is suitable for use in industrial control, communication systems, and high-frequency circuits. The UB package facilitates efficient integration into automated assembly processes.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | UB |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 25 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 500 pA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 175 mA @ 15 V |
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