2N4858UB
JFET N-CH 40V 3UBManufacturer: Microchip Technology
Categories: JFETs
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Microchip Technology's 2N4858UB is an N-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 40V and a maximum power dissipation of 360mW. The 2N4858UB exhibits a typical drain current (Idss) of 8mA at 15V with a gate-source voltage (Vgs) of 0V. Its gate-source cutoff voltage (Vgs off) is specified at 4V with a gate current of 500pA. The device has a breakdown voltage (V(BR)GSS) of 40V and an on-resistance (RDS(On)) of 60 Ohms. Input capacitance (Ciss) is a maximum of 18pF at 10V Vds (VGS). Operating across a temperature range of -65°C to 200°C, this JFET is housed in a 3-SMD, No Lead package, supplied in bulk. Applications for this component include general-purpose switching and amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | UB |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 60 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 500 pA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA @ 15 V |
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