Microchip Technology 2N4857UB is an N-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 40V and a maximum power dissipation of 360mW. The current at zero gate-source voltage (Idss) is specified at 100mA @ 15V, with a typical gate-source cutoff voltage (Vgs off) of 6V @ 500pA. Input capacitance (Ciss) is a maximum of 18pF @ 10V. Operating across an extended temperature range of -65°C to 200°C, the 2N4857UB is packaged in a 3-SMD, No Lead (UB) configuration, supplied in bulk. It finds application in various electronic systems requiring precise voltage and current control, including instrumentation and switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | UB |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 40 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 6 V @ 500 pA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 100 mA @ 15 V |
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