Microchip Technology's 2N4856UB is an N-channel JFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 40 V and a maximum power dissipation of 360 mW. Key electrical characteristics include a drain current (Idss) of 175 mA @ 15 V and a gate-source cutoff voltage (VGS off) of 10 V. The input capacitance (Ciss) is specified at a maximum of 18 pF @ 10 V.
The 2N4856UB utilizes a surface mount UB package, suitable for high-density board designs. Its operational temperature range extends from -65°C to 200°C. This JFET is commonly employed in analog switching, amplification, and signal processing circuits within the industrial and aerospace sectors. The bulk packaging option facilitates high-volume integration.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | UB |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 25 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 500 pA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 175 mA @ 15 V |
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