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2N3823UB

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2N3823UB

JFET N-CH 30V UB

Manufacturer: Microchip Technology

Categories: JFETs

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Microchip Technology's 2N3823UB is an N-Channel JFET designed for demanding applications. This surface-mount device offers a drain-to-source breakdown voltage (Vdss) of 30V and a maximum power dissipation of 300mW. Key electrical characteristics include a drain current (Idss) of 4mA at 15V and a cutoff voltage (VGS off) of 8V at 500pA. The input capacitance (Ciss) is specified at a maximum of 6pF at 15V. The device operates across a wide temperature range of -55°C to 200°C. Packaged in a 3-SMD, No Lead UB configuration, the 2N3823UB is suitable for use in various industrial and telecommunications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 200°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds6pF @ 15V
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageUB
Drain to Source Voltage (Vdss)30 V
Power - Max300 mW
Voltage - Cutoff (VGS off) @ Id8 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0)4 mA @ 15 V

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