MSCGLQ50H120CTBL2NG
PM-IGBT-SBD-BL2Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology MSCGLQ50H120CTBL2NG is a full-bridge power module featuring an IGBT with integrated Silicon PiN Diode (SBD) and a blocking diode, configured for robust performance. This component boasts a collector-emitter breakdown voltage of 1200 V and a maximum collector current (Ic) of 110 A, with a power dissipation capability of 375 W. The module includes an NTC thermistor for thermal monitoring and is designed for chassis mounting. Key electrical specifications include a Vce(on) of 2.4V at 15V gate-emitter voltage and 50A collector current, and an input capacitance (Cies) of 2.77 nF at 25V. Operating across a wide temperature range from -55°C to 175°C (TJ), this device is suitable for demanding applications in industrial power supplies, motor control, and renewable energy systems. The MSCGLQ50H120CTBL2NG is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 375 W |
| Current - Collector Cutoff (Max) | 25 µA |
| Input Capacitance (Cies) @ Vce | 2.77 nF @ 25 V |
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