MSCGLQ50DU120CTBL1NG
PM-IGBT-SBD-BL1Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's MSCGLQ50DU120CTBL1NG is a Half Bridge Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 110 A. With a maximum power dissipation of 375 W and a Vce(on) of 2.4V at 15V gate-source voltage and 50A collector current, it offers efficient switching performance. The module includes an integrated NTC thermistor for thermal management and operates across a wide temperature range of -55°C to 175°C. Its chassis mount configuration facilitates robust integration into power systems. This IGBT module is suitable for demanding industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 375 W |
| Current - Collector Cutoff (Max) | 25 µA |
| Input Capacitance (Cies) @ Vce | 2.77 nF @ 25 V |
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