MSCGLQ50DH120CTBL2NG
PM-IGBT-SBD-BL2Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's MSCGLQ50DH120CTBL2NG is an asymmetrical bridge IGBT module designed for robust performance in demanding applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 110 A. The module boasts a 375 W power dissipation capability and a low Vce(on) of 2.4V at 15V gate-emitter voltage and 50A collector current. It includes an integrated NTC thermistor for thermal management and operates across a wide temperature range of -55°C to 175°C. With a chassis mount configuration, this module is well-suited for power conversion systems in industrial automation, motor drives, and renewable energy sectors. Its 2.77 nF input capacitance at 25V ensures efficient switching characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Asymmetrical Bridge |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 375 W |
| Current - Collector Cutoff (Max) | 25 µA |
| Input Capacitance (Cies) @ Vce | 2.77 nF @ 25 V |
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