MSCGLQ50DDU120CTBL2NG
PM-IGBT-SBD-BL2Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's MSCGLQ50DDU120CTBL2NG is a full-bridge IGBT module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 110 A, with a power dissipation rating of 375 W. The module includes an integrated NTC thermistor for thermal management and operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a Vce(on) of 2.4V at 15V gate-emitter voltage and 50A collector current, and an input capacitance (Cies) of 2.77 nF at 25V. The chassis mount package facilitates robust thermal coupling in demanding environments. This IGBT module is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 375 W |
| Current - Collector Cutoff (Max) | 25 µA |
| Input Capacitance (Cies) @ Vce | 2.77 nF @ 25 V |
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