MSCGLQ50A120CTBL1NG
PM-IGBT-SBD-BL1Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's MSCGLQ50A120CTBL1NG is a robust IGBT module featuring a half-bridge configuration. This component is rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 110 A, with a maximum power dissipation of 375 W. The module incorporates an NTC thermistor for thermal management and is designed for chassis mounting. Key electrical parameters include a Vce(on) of 2.4V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 2.77 nF at 25V. Operating within an extended temperature range of -55°C to 175°C, this device is suitable for demanding applications in power conversion, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 375 W |
| Current - Collector Cutoff (Max) | 25 µA |
| Input Capacitance (Cies) @ Vce | 2.77 nF @ 25 V |
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