APTGT75TA120PG
IGBT MODULE 1200V 100A 350W SP6PManufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGT75TA120PG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module. This three-phase device offers a 1200V collector-emitter breakdown voltage and a continuous collector current of 100A. The module is rated for 350W maximum power dissipation. Key electrical characteristics include a typical Vce(on) of 2.1V at 15V Vge and 75A Ic, and an input capacitance (Cies) of 5.34nF at 25V. Designed for chassis mounting, this component operates within a temperature range of -40°C to 150°C. The SP6-P package facilitates efficient thermal management. Applications for this IGBT module are found in motor control, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | SP6-P |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 350 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 5.34 nF @ 25 V |
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