APTGT75A120T1G
IGBT MODULE 1200V 110A 357W SP1Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGT75A120T1G is a Trench Field Stop IGBT module with a half-bridge configuration. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 110 A. The module offers a Vce(on) of 2.1 V at 15 V gate-emitter voltage and 75 A collector current. It includes an integrated NTC thermistor for thermal management and is rated for a maximum power dissipation of 357 W. The input capacitance (Cies) is 5.34 nF at 25 V. This chassis-mount device is suitable for applications in industrial motor drives, electric vehicles, and power factor correction systems. The operating temperature range is -40°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 357 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 5.34 nF @ 25 V |
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