Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

APTGT750U60D4G

Banner
productimage

APTGT750U60D4G

IGBT MODULE 600V 1000A 2300W D4

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology APTGT750U60D4G is a trench field stop single Insulated Gate Bipolar Transistor (IGBT) module. This component features a 600 V collector-emitter breakdown voltage and a high 1000 A collector current capability. The module is rated for a maximum power dissipation of 2300 W and is designed for chassis mounting in a D4 package. Key electrical specifications include a Vce(on) of 1.9 V at 15 V gate-emitter voltage and 800 A collector current, with an input capacitance (Cies) of 49 nF at 25 V. The operating temperature range is -40°C to 175°C (TJ). This device is suitable for applications in industrial motor drives, electric vehicle propulsion, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseD4
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 800A
NTC ThermistorNo
Supplier Device PackageD4
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)1000 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max2300 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce49 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APTGLQ75H65T1G

IGBT MODULE 650V 150A 250W SP1

product image
APTCV50H60T3G

IGBT MODULE 600V 80A 176W SP3

product image
APTGLQ100A65T1G

IGBT MODULE 650V 200A 350W SP1