APTGT50TL601G
IGBT MODULE 600V 80A 176W SP1Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's APTGT50TL601G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for three-level inverter configurations. This module offers a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A. The APTGT50TL601G features a low collector-emitter saturation voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 50 A collector current, with a maximum power dissipation of 176 W. Input capacitance (Cies) is rated at 3.15 nF at 25 V. This chassis mount module operates within a temperature range of -40°C to 175°C (TJ). It is suitable for applications in industrial power conversion and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Level Inverter |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | SP1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 176 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 3.15 nF @ 25 V |
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