APTGT50TA60PG
IGBT MODULE 600V 80A 176W SP6PManufacturer: Microchip Technology
Categories: IGBT Modules
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The Microchip Technology APTGT50TA60PG is a trench field stop Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power applications. This three-phase module offers a 600 V collector-emitter breakdown voltage and a maximum collector current of 80 A. With a power dissipation rating of 176 W, it is suitable for high-power switching and control. The module features a low Vce(on) of 1.9 V at 15 V Vge and 50 A Ic, minimizing conduction losses. Its standard input offers straightforward integration, and the 3.15 nF input capacitance (Cies) @ 25 V is a key parameter for gate drive design. The APTGT50TA60PG is engineered for chassis mounting and operates reliably across an extended temperature range of -40°C to 175°C (TJ). This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | SP6-P |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 176 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 3.15 nF @ 25 V |