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APTGT50SK170T1G

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APTGT50SK170T1G

IGBT MODULE 1700V 75A 312W SP1

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

The Microchip Technology APTGT50SK170T1G is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for demanding applications. This component features a 1700V collector-emitter breakdown voltage and a maximum collector current of 75A. With a power dissipation rating of 312W, it is suitable for high-power switching operations. The module exhibits a typical Vce(on) of 2.4V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 4.4 nF at 25V. An integrated NTC thermistor facilitates thermal monitoring. This chassis mount module is engineered for reliability in industrial motor drives, power supplies, and renewable energy systems. The operating temperature range is -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSP1
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 50A
NTC ThermistorYes
Supplier Device PackageSP1
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max312 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce4.4 nF @ 25 V

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