APTGT50DH60T1G
IGBT MODULE 600V 80A 176W SP1Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGT50DH60T1G is an IGBT module featuring Trench Field Stop technology, configured as an asymmetrical bridge. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 80A. The module dissipates a maximum power of 176W and exhibits a Vce(on) of 1.9V at 15V Vge and 50A Ic. Input capacitance (Cies) is 3.15 nF at 25V. Designed for robust operation, it includes an integrated NTC thermistor for thermal management and operates across an extended temperature range of -40°C to 175°C (TJ). Mounting is facilitated via chassis mount, utilizing the SP1 package. This IGBT module is suitable for applications in industrial power systems, motor control, and power factor correction.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Asymmetrical Bridge |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 176 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 3.15 nF @ 25 V |