APTGT50DH120TG
IGBT MODULE 1200V 75A 277W SP4Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGT50DH120TG is a Trench Field Stop IGBT module featuring an asymmetrical bridge configuration. This component is rated for 1200 V and a continuous collector current (Ic) of 75 A, with a maximum power dissipation of 277 W. The module exhibits a low collector-emitter saturation voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 50A collector current. Key specifications include an input capacitance (Cies) of 3.6 nF at 25 V and a collector cutoff current of 250 µA. The APTGT50DH120TG incorporates an integrated NTC thermistor for temperature monitoring and is designed for chassis mounting using the SP4 package. Operating temperature range is from -40°C to 150°C (TJ). This IGBT module is suitable for applications in industrial power systems and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Asymmetrical Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP4 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 277 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 3.6 nF @ 25 V |
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