APTGT35X120T3G
IGBT MODULE 1200V 55A 208W SP3Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGT35X120T3G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for three-phase inverter applications. This chassis-mount device features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 55 A. With a power dissipation rating of 208 W and a low Vce(on) of 2.1 V at 15 V Vge and 35 A Ic, it offers efficient power switching. The module includes an integrated NTC thermistor for temperature monitoring. Key specifications include a typical input capacitance (Cies) of 2.5 nF at 25 V and an operating temperature range of -40°C to 150°C (TJ). The APTGT35X120T3G is utilized in industries such as industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP3 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 208 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 2.5 nF @ 25 V |
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