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APTGT35A120T1G

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APTGT35A120T1G

IGBT MODULE 1200V 55A 208W SP1

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology APTGT35A120T1G is a Trench Field Stop Half Bridge IGBT Module. This component offers a 1200 V collector-emitter breakdown voltage and a 55 A continuous collector current. It features a maximum power dissipation of 208 W and a low on-state voltage of 2.1V at 15V gate-emitter voltage and 35A collector current. The module includes an integrated NTC thermistor for temperature monitoring and is designed for chassis mounting within the SP1 package. Its operating temperature range is -40°C to 150°C. This IGBT module is suitable for applications in industrial automation, motor drives, and power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP1
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 35A
NTC ThermistorYes
Supplier Device PackageSP1
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)55 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max208 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce2.5 nF @ 25 V

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