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APTGT225SK170G

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APTGT225SK170G

IGBT MODULE 1700V 340A 1250W SP6

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology APTGT225SK170G is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This component features a robust 1700 V collector-emitter breakdown voltage and can handle a continuous collector current of up to 340 A, with a maximum power dissipation of 1250 W. The module is housed in a compact SP6 package for efficient chassis mounting. Key electrical characteristics include a Vce(on) of 2.4V at 15V gate-emitter voltage and 225A collector current, and an input capacitance (Cies) of 20 nF at 25V. Operating across a wide temperature range of -40°C to 150°C, this IGBT module is suitable for industrial motor drives, electric vehicle powertrains, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSP6
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 225A
NTC ThermistorNo
Supplier Device PackageSP6
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)340 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max1250 W
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce20 nF @ 25 V

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