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APTGLQ200HR120G

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APTGLQ200HR120G

IGBT MODULE 1200V 300A 1000W SP6

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology APTGLQ200HR120G is a high-performance Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power conversion applications. This module features a robust 1200V collector-emitter breakdown voltage and a substantial 300A continuous collector current capability, with a maximum power dissipation of 1000W. The Vce(on) is rated at 2.4V maximum at 15V gate-emitter voltage and 160A collector current, ensuring efficient operation. Its input capacitance (Cies) is 9.2 nF at 25V. The module utilizes a through-hole mounting style within the SP6 package, facilitating straightforward integration into existing board designs. Operating across a wide temperature range of -40°C to 175°C (TJ), it is suitable for various industrial environments including motor drives, industrial power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSP6
Mounting TypeThrough Hole
InputStandard
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 160A
NTC ThermistorNo
Supplier Device PackageSP6
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)300 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max1000 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce9.2 nF @ 25 V

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