APTGL475DA120D3G
IGBT MODULE 1200V 610A 2080W D3Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGL475DA120D3G is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module. This component is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 610 A. The module offers a maximum power dissipation of 2080 W and features a low on-state voltage (Vce(on)) of 2.2V at 15V gate-emitter voltage and 400A collector current. Input capacitance (Cies) is specified at 24.6 nF at 25V. The device is constructed for chassis mounting in a D3 Module package. Operating temperature ranges from -40°C to 175°C (TJ). This IGBT module is suitable for high-power applications in industrial motor drives and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-3 Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 400A |
| NTC Thermistor | No |
| Supplier Device Package | D3 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 610 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 2080 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 24.6 nF @ 25 V |
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