APTGL475A120D3G
IGBT MODULE 1200V 610A 2080W D3Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's APTGL475A120D3G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module. This half-bridge configured component offers a 1200V collector-emitter breakdown voltage and a maximum collector current of 610A. With a power dissipation of 2080W, it is designed for demanding applications. The module features a low on-state voltage of 2.2V at 15V gate-emitter voltage and 400A collector current. Input capacitance (Cies) is specified at 24.6 nF at 25V. The APTGL475A120D3G is suitable for chassis mounting and operates within an extended temperature range of -40°C to 175°C (TJ). Key industries utilizing this component include industrial automation, power supply, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-3 Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 400A |
| NTC Thermistor | No |
| Supplier Device Package | D3 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 610 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 2080 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 24.6 nF @ 25 V |
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