APTGF50DH120T3G
IGBT MODULE 1200V 70A 312W SP3Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGF50DH120T3G is an NPT Asymmetrical Bridge IGBT Module designed for high-power applications. This module features a 1200V collector-emitter breakdown voltage and a maximum collector current of 70A. With a power dissipation of 312W, it is suitable for demanding industrial environments. The module exhibits a typical Vce(on) of 3.7V at 15V gate-emitter voltage and 50A collector current, with an input capacitance (Cies) of 3.45 nF at 25V. It includes an integrated NTC thermistor for thermal management and is housed in an SP3 package for chassis mounting. This component is utilized in power conversion systems, motor drives, and renewable energy applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Asymmetrical Bridge |
| Operating Temperature | - |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP3 |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 312 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 3.45 nF @ 25 V |
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