Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

APTGF25H120T1G

Banner
productimage

APTGF25H120T1G

IGBT MODULE 1200V 40A 208W SP1

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology APTGF25H120T1G is an NPT IGBT module featuring a full bridge inverter configuration. This component is rated for 1200 V collector-emitter breakdown voltage and a maximum collector current of 40 A. The module offers a maximum power dissipation of 208 W and exhibits a Vce(on) of 3.7V at 15V gate-emitter voltage and 25A collector current. Input capacitance (Cies) is specified at 1.65 nF at 25V. An integrated NTC thermistor is included for thermal monitoring. The device is designed for chassis mounting within the SP1 package. This IGBT module is suitable for applications in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP1
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge Inverter
Operating Temperature-
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 25A
NTC ThermistorYes
Supplier Device PackageSP1
IGBT TypeNPT
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max208 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce1.65 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APTGL60DDA120T3G

IGBT MODULE 1200V 80A 280W SP3

product image
APTGT75DDA60T3G

IGBT MODULE 600V 100A 250W SP3

product image
APTGLQ75H120T3G

IGBT MODULE 1200V 130A 385W SP1